型号 IPD320N20N3 G
厂商 Infineon Technologies
描述 MOSFET N-CH 200V 34A TO252-3
IPD320N20N3 G PDF
代理商 IPD320N20N3 G
产品目录绘图 Mosfets TO-252-3-11, TO-252-3
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 34A
开态Rds(最大)@ Id, Vgs @ 25° C 32 毫欧 @ 34A,10V
Id 时的 Vgs(th)(最大) 4V @ 90µA
闸电荷(Qg) @ Vgs 29nC @ 10V
输入电容 (Ciss) @ Vds 2350pF @ 100V
功率 - 最大 136W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 标准包装
其它名称 IPD320N20N3 GDKR
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